data sheet semiconductor http://www.yeashin.com 1 rev.02 20120403 RB751G-40 schottky barrier diode z a pplic a t ions g eneral rectification z f eatu r es 1) small pow er mold ty pe. (so d-723) 2) low v f 3) high reliability z cons truc tion silicon epit a xial planar z a b so lu te maximu m ratin g s (t a= 25 c) z electrical ch aracteristic (t a= 25 c) sy m b ol unit v rm v v r v io m a i fsm ma fo tj ts tg rw ard c u rren t su rg e p e a k 60 h z ? 1cy c 20 0 unc tion te m p eratu r e te m p eratu r e paramet e r e ve rse vo lt ag e ( dc) v e r ag e r e c t ifi e d f o rw ar d c u r r e n t e ve rse vo ltag e (re petitive pea k) -40 to +125 limits 30 30 40 12 5 j storage r a r sy mbo l min. t y p. max. un it co nd it ion s v f -- 0 . 3 7 v i f =1m a reve rse cu rr en t i r -- 0 . 5 a v r =3 0v ct - 2 - p f v r =1 v , f = 1m hz cap a cita nce b e tw parameter o rw ard volta g e ee n term in als f 4) pb-free package is available device marking and ordering information device marking shipping 5 3000/tape&reel RB751G-40 z sod? 723 2 anode 1 cathode h
http://www.yeashin.com 2 rev.02 20120403 RB751G-40 device characteristics : i f(ma) rren t c u forward v) ( m age: vf volt w ard f o r f f o rward vo l t agevf(mv) vf -if charac t e rist ics 0 r ever se c u rren t : i r ( n a ) revers e vo l t agevr( v ) v r - i r c h ar ac t e r i s t ic s c a paci tan c e b e t w een te rmin als : ct( p f ) re v e rs e voltage:vr( v ) v r -ct characteri sti c s vf d is pe r s ion map reverse c u rre n t :i r( na) ir d isp e r s i o n map cap a c i t a n c e be tw een te r m in a l s : c t (pf ) ct d is p e rs io n map if sm d is r e sio n map peak s u r g e o rwa r d current : i fs m( a) pe a k s ur ge f o r w ard current : i fs m( a) n u mber o f cycl e s if sm-c yc le c har a c t e r is tic s t rr d i sp e r si o n map reserve rec o very t i m e:tr r ( ns) 0.00 1 0.0 1 0. 1 1 10 10 0 0 1 0 0 20 0 300 400 5 0 0 6 0 0 700 800 t a =-2 5 t a =12 5 t a =75 t a =25 1 10 10 0 10 00 100 00 1000 00 0 5 10 15 20 25 30 3 5 4 0 ta =1 25 t a =75 t a =25 ta =- 25 0.1 1 10 0 5 10 1 5 2 0 25 30 f=1mhz 28 0 29 0 30 0 31 0 32 0 33 0 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 7 8 9 10 ave:1. 81pf ta=25 f= 1 m hz vr= 0 v n=10pcs 0 5 10 15 20 ave:3 .40a 8.3 m s ifsm 1cyc 0 5 10 15 20 25 30 ave :1 1.7ns ta=25 i f =0. 5a ir=1a irr = 0.25 *i r n=10pcs 0 2 4 6 8 10 1 1 0 100 ave : 304. 2mv ta = 25 if=1ma n= 30p cs t a =25 vr=30v n=30pcs ave:1 11.0 n a 8.3m s if sm 1cyc 8. 3ms electrical characteristic curves (ta=25 o c)
http://www.yeashin.com 3 rev.02 20120403 RB751G-40 device characteristics re v e rs e voltage:vr( v ) vr-p r c h arac t e r i st ics am bi en t t e m p erat u r e:t a ( ) dera ting cu r ve?( io -ta) average rec t i f i for w ard current : i o(a) averag e r ect i fi ed forward c u rr en t:i o ( a ) c a s e t emparatu re :tc( ) derating curve? ( io -tc) 0 0.0 0 1 0.0 0 2 0.0 0 3 0 1 02 0 3 04 0 0 0.02 0.04 0.06 0.08 0.1 0 2 5 5 0 7 5 100 1 2 5 0 0.02 0.04 0.06 0.08 0.1 0 2 5 5 0 7 5 100 1 2 5 s i n( ? 1 80) dc d=1/2 s i n ( ? 18 0) dc d= 1 / 2 sin( 180) dc d=1/2 t tj=125 d= t / t t vr io vr=20v 0a 0v t t j =125 d=t/t t vr io vr= 20v 0a 0v ) re v e rs e po wer di s s i p a t io n : p r (w peak s urg e f o rward current:i f s m(a) ti me: t ( m s ) ifs m -t c haracteri s ti cs time : t (s) r t h - t c h a ra ct er i s t i cs tr a n s i en t t h ae r m al i m p e d a n c e : r t h ( / w ) fo r w a r d po w e r dis s i p a t io n: pf (w) averag e r ect i f i ed for w a r d currentio ( a) io -p f c ha r a c t e r i s ti cs 0 2 4 6 8 10 0 . 1 1 10 10 0 t ifs m 0 0. 0 1 0. 0 2 0. 0 3 0. 0 4 0. 0 5 0 0 .01 0 . 0 2 0 . 0 3 0 .04 0 .05 10 100 1 000 0. 001 0 . 1 1 0 1000 rth( j-a ) rth(j-c) 1m s im = 1 m a if = 1 0 m a 30 0u s tim e m o unte d o n e pox y b oar d dc d=1/ 2 sin( 180) electrical characteristic curves (ta=25 o c)
http://www.yeashin.com 4 rev.02 20120403 RB751G-40 package outline & dimensions sod?723 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min nom max millimeters a 0.49 0.52 0.55 b 0.25 0.28 0.32 c 0.08 0.12 0.15 d 0.95 1.00 1.05 e 0.55 0.60 0.65 1.35 1.40 1.45 l 0.15 0.20 0.25 h e 0.019 0.020 0.022 0.0098 0.011 0.013 0.0032 0.0047 0.0059 0.037 0.039 0.041 0.022 0.024 0.026 0.053 0.055 0.057 0.006 0.0079 0.010 min nom max inches d e b c a l 2x ?y? ?x? 0.08 (0.0032) xy h e 0.45 0.0177 0.50 0.0197 1.1 0.043 mm inches scale 10:1 soldering footprint*
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